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APT22M100JCU3
ISOTOP(R) Buck chopper
MOSFET + SiC chopper diode Power module
D
VDSS = 1000V RDSon = 400m typ @ Tj = 25C ID = 22A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies Features
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G
*
S
Power MOS 8TM MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
A
* SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * * ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
S D
A
G
ISOTOP(R)
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1000 22 17 120 30 480 463 16 Unit V A V m W A
September, 2009 1-5 APT22M100JCU3 - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APT22M100JCU3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS =1000V VGS = 0V Tj = 125C VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 500 480 5 100 Unit A m V nA
3
400 4
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance www..com Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 16A Resistive switching @ 25C VGS = 15V VBus = 667V ID = 16A RG = 2.2 Min Typ 6800 700 92 260 46 125 39 35 130 33 ns nC Max Unit pF
SiC chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Min 1200 Typ 32 56 10 1.6 2.3 80 96 69 Max 200 1000 1.8 3 Unit V A A V nC pF
IF = 10A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min Mosfet SiC Diode 2500 -40
Typ
Max 0.27 1.65 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
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2-5
APT22M100JCU3 - Rev 0
September, 2009
Thermal and package characteristics
APT22M100JCU3
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
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14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Anode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W)
0.9 0.7 0.5
0.2
0.1
0.3 0.1 0.05 Single P ulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-5
APT22M100JCU3 - Rev 0
September, 2009
APT22M100JCU3
Low Voltage Output Characteristics 50
VGS=10V
Low Voltage Output Characteristics 35
TJ=125C
ID, Drain Current (A)
ID, Drain Current (A)
30 25 20 15 10 5 0
40 30
TJ=25C
VGS=6, 7, 8 & 9V
TJ=125C
20 10 0
5V
4.5V
0 www..com
5
10
15
20
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V) Normalized RDSon vs. Temperature
VDS, Drain to Source Voltage (V) Transfert Characteristics
RDSon, Drain to Source ON resistance
3 ID, Drain Current (A) 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=16A
35 30 25 20 15 10 5 0 0
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C
TJ=25C
1
2
3
4
5
6
7
TJ, Junction Temperature (C)
Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC)
VDS=800V VGS=10V ID=16A VDS=200V
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 1000 100 10 1 0 50 100 150 200
September, 2009 4-5 APT22M100JCU3 - Rev 0
Ciss
C, Capacitance (pF)
VDS=500V
Coss Crss
VDS, Drain to Source Voltage (V)
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APT22M100JCU3
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.3 0.7 0.5 0.9
0 0.00001 www..com
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 100
TJ=25C
20
IF Forward Current (A)
16
TJ=75C
IR Reverse Current (A)
75
12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=125C
50
TJ=75C TJ=125C TJ=175C TJ=25C
25
TJ=175C
0 400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
700 C, Capacitance (pF) 600 500 400 300 200 100 0
September, 2009 5-5 APT22M100JCU3 - Rev 0
1
10 100 VR Reverse Voltage
1000
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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